College of Engineering
Dr. Shui-Qing (Fisher) Yu received his B.S. and M.S. in Electronics from Peking University in 1997 and 2000, respectively, and his Ph.D in Electrical Engineering from Arizona State University (ASU) in 2005. He spent one year as a Postdoctoral Research Associate in ASU MBE Optoelectronic Group and then joined the Center for Nanophotonics of Arizona Institute of Nano-Electronics in ASU as an Assistant Research Professor. Dr. Yu joined the Electrical Engineering department as an Assistant Professor in 2008 and was promoted to Associate Professor in 2014. In his research, he develops optoelectronic devices using novel materials, such as Bismide compounds and Silicon-Germanium-Tin alloys. These materials, along with advanced nanofabrication techniques, could increase the efficiency and decrease the cost of devices such as lasers, photodetectors, and infrared cameras. Dr. Yu has published 44 articles in refereed journals and 102 articles/abstracts in conference proceedings. He has also given/contributed 122 presentations and 19 invited talks at conferences and workshops regarding his research activities. He is a member of the International Society for Optical Engineering and the Institute of Electrical and Electronics Engineers.
Dr. Yu won the Palais Outstanding Doctoral Student Award in 2005 from the ASU Electrical Engineering Department and the IEEE Phoenix Society Chapter award in 2008 for technical contributions. Dr. Yu has received an Outstanding Researcher award from the U of A College of Engineering, the William D. Brown and Margaret A. Brown Faculty Excellence Award from the department of electrical engineering,, and University of Arkansas College of Engineering Imhoff Outstanding Researcher Award in 2011, 2013, 2014, respectively. In 2012, Dr. received the prestigious Faculty Early Career Development award from the National Science Foundation.
Semiconductor optoelectronic devices such as lasers, photo detectors, THz devices, and renewable energy devices covering visible to far-infrared wavelength ranges by using novel Bismide compounds and SiGeSn alloys and advanced nanofabrication techniques.
- B.S., Electronics, Peking University
- M.S., Electronics Peking University
- Ph.D., Electrical Engineering, Arizona State University
- Wei Du, Yiyin Zhou, Seyed A. Ghetmiri, Aboozar Mosleh, Benjamin R. Conley, Amjad Nazzal, Richard A. Soref, Greg Sun, John Tolle, Joe Margetis, Hameed A. Naseem, and Shui-Qing Yu, “Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge double heterostructure LEDs on Si substrates via CVD,” Appl. Phys. Lett, vol. 104, pp. 241110 (2014)
- Benjamin R. Conley, Aboozar Mosleh, Seyed Amir Ghetmiri, Wei Du, Richard A. Soref, Greg Sun, Joe Margetis, John Tolle, Hameed A. Naseem, and Shui-Qing Yu, "Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection," Opt. Express Vol. 22, No. 13, pp. 15639-15653 (2014).
- Greg Sun, Shui-Qing Yu, The SiGeSn Approach towards Si-based Lasers, Invited paper, Solid-State Electronics 83 (2013) 76–81
- D. Fan, , Z. Zeng, X. Hu, V. G. Dorogan, C. Li, M. Benamara, M. E. Hawkridge, Yu, I. Mazur, S.-Q. Yu, S. R. Johnson, Zh. M. Wang, and G. J. Salamo, Molecular Beam Epitaxy Growth of GaAsBi/GaAs/AlGaAs Separate Confinement Heterostructures, Appl. Phys. Lett., vol. 101, pp. 181103 (2012).
- D. Ding, S. R. Johnson, S.-Q. Yu, S.-N. Wu, and Y.-H. Zhang, A Semi-Analytical Model for Semiconductor Solar Cells, J. Appl. Phys., 110, 123104 (2011).